2SB1185 transistor (pnp) features power dissipation p cm : 2 w (tamb=25 ) collector current i cm : -3 a collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -50 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic= -1 ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e = -50 a, i c =0 5 v collector cut-off current i cbo v cb = -40 v, i e =0 -1 a emitter cut-off current i ebo v eb = -4 v, i c =0 -1 a dc current gain h fe(1) v ce = -3 v, i c = -0.5 a 60 320 collector-emitter saturation voltage v ce(sat) i c = -2 a, i b = -0.2 a -1 v base-emitter saturation voltage v be(sat) i c = -2 a, i b = -0.2 a -1.5 v transition frequency f t v ce = -5 v, i c = -0.5 a, f= 30 mhz 70 mhz collector output capacitance c ob v cb =-10v, i e =0, f= 1 mhz 50 pf classification of h fe(1) rank d e f range 60-120 100-200 160-320 marking 1 2 3 to-220 1. base 2. collector 3. emitter 2SB1185 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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